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VHB50-28F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VHB50-28F is an NPN power transistor designed for 28 V Class-C ground station transmitters, it utilizes emitter ballasting and gold metallization to provide optimum VSWR capability.
PACKAGE STYLE .380 4L FLG
B .112 x 45 A
E
C
O.125 NOM. FULL R J .125
FEATURES:
* Common Emitter * PG = 6.0 dB at 50 W/175 MHz * OmnigoldTM Metalization System
B
C D F E
E
I GH
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG JC 6.5 A 65 V 35 V 4.0 V 75W -65 C to +200 C -65 C to +150 C 2.3 C/W
DIM A B C D E F G H I J .240 / 6.10 .004 / 0.10 .085 / 2.16 .160 / 4.06 MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64
.230 / 5.84
.730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.48
ORDER CODE: ASI10728
CHARACTERISTICS
SYMBOL
BVCEO BVCES BVEBO ICBO hFE Cob PG C
TC = 25 C
NONETEST CONDITIONS
IC = 200 mA IC = 200 mA IE = 10 mA VCB = 30 V VCE = 5.0 V VCB = 28 V VCE = 28 V PIN = 12 W POUT =50 W IC = 500 mA f = 1.0 MHz f = 175 MHz
MINIMUM TYPICAL MAXIMUM
35 65 4.0 2.0 10 150 80 6.0 60
UNITS
V V V mA --pF dB %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004
Specifications are subject to change without notice.
REV. C
1/2
VHB50-28F ERROR! REFERENCE SOURCE NOT FOUND.
IMPEDANCE DATA
FREQ. 150 MHz POUT = 60 W VCE = 28 V ZIN () 1.0 + j2.0 ZCL () 4.0 - j3.69
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004
Specifications are subject to change without notice.
REV. C
2/2

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